School of Materials Science and Engineering

Chinese Version

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Dean of School of Materials Science and Engineering

Jinwu Building, Room 403

Published Research (English only)

1.   Z. D. Xu, L. N. Yu, X. G. Xu, J. Miao, Y. Jiang, “Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures”, Appl. Phys. Lett. 104, 192903(2014).

2.   J. Miao, K.-H Chew, J. X. Zhang, Q. Zhan, X. G. Xu, and Y. Jiang, “Enhanced Fatigue and Ferroelectric Properties in Multiferroic (Ba0.7Sr0.3)TiO3/(Bi1.05La0.05)FeO3 Epitaxial Heterostructures”, Appl. Phys. Lett. 102, 232902(2013).

3.   J. Miao, K. H. Chew, Y. Jiang, “Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O3 films by Co acceptor doping”, Appl. Phys. Lett. 99, 232910 (2011).

4.   J. Miao, X. Zhang, Q. Zhan, Y. Jiang, K. H. Chew, “Bi-relaxation behaviors in epitaxial multiferroic double-perovskite BiFe0.5Mn0.5O3/CaRuO3 heterostructures”, Appl. Phys. Lett. 99, 062905(2011).

5.   X. G. Xu, H. L. Yang, Y. Wu, D. L. Zhang, S. Z. Wu, J. Miao, Y. Jiang, “Intrinsic Room Temperature Ferromagnetism in Boron-Doped ZnO”, Appl. Phys. Lett. 97, 232502(2010).

6.   X. Q. Li, X. G. Xu, D. L. Zhang, J. Miao, Q. Zhan, M. B. A. Jalil, G. H. Yu, Y. Jiang, “Perpendicularizing Magnetic Anisotropy of Full-Heusler Co2FeAl films by Co-Sputtering with Terbium”, Appl. Phys. Lett. 96, 142505(2010).

7.   J. Miao, X. G. Xu, Y. Jiang, L. X. Cao, and B. R. Zhao, “Ionized-oxygen vacancies related dielectric relaxation in heteroepitaxial K0.5Na0.5NbO3/La0.67Sr0.33MnO3 structure at elevated temperature”, Appl. Phys. Lett. 95, 132905(2009).

8.   Y.Jiang, G.H.Yu, Y.B.Wang, J.Teng, T.Ochiai, N.Tezuka, and K.Inomata, “Spin transfer in antisymetric exchange-biased spin-valves”, Appl.Phys.Lett., vol.86, issue 19, 192515(2005).

9.   T.Ochiai, Y.Jiang, A.Hirohata, N.Tezuka, S.Sugimoto, and K.Inomata, “Distinctive current-induced magnetization switching in a current-perpendicular-to-plane giant-magnetoresistance nanopillar with a synthetic antiferromagnet free layer”, Appl.Phys.Lett. vol. 86, issue 24, 242506(2005).

10.  Y.Jiang, T.Nozaki, S.Abe, T.Ochiai, A.Hirohata, N.Tezuka, and K.Inomata, “Substantial reduction of critical current for magnetization switching in an exchange-biased spin-valve”, Nature Materials, vol.3,issue 6, 361-364(2004).

11.  Y.Jiang, S.Abe, T.Nozaki, T.Ochiai, A.Hirohata, N.Tezuka, and K.Inomata, “An effective reduction of critical current for current-induced magnetization switching by a Ru cap layer in an exchange-biased spin-valve”, Phys.Rev.Lett.vol.92, No.16,167204(2004). 

12.  Y.Jiang, S.Abe, T.Nozaki, N.Tezuka, and K.Inomata, “ Enhancement of current-perpendicular-to-plane magnetoresistance by synthetic antiferromagnet free layer in single spin-valve films”, Appl.Phys.Lett, Vol.83, No.14, 2874-2876(2003).

13.  Y.Jiang, S.Abe, N.Tezuka, and K.Inomata, “Perpendicular giant magnetoresistance and magnetic switching properties of single spin-valve with synthetic antiferromagnet as a free layer”, Phys. Rev. B. Vol.68(22), 224426(2003).

14.  Y. Jiang and M. B. A. Jalil, "Comment on 'Spin filtering in a magnetic-electrical barrier structure' [Appl. Phys. Lett. 78, 2184(2001)]", Appl. Phys. Lett. 80, 1673-1674(2002). 

15.  Y.Jiang, S.L.Yuan, J.F.Hu and L.Liu, "Evidence of spin-polarized tunneling in phase separated manganites La1/3Sr2/3-xBaxMnO3 (0<x<0.67)", Appl. Phys. Lett, 79, 3470-3472(2001).