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CHEN Leng
Professor at Department of Materials Science and Engineering
lchen@ustb.edu.cn
+86-010-62332919
Main Building, Room 328
Available to act as adviser for international graduate student: No
Biography
Dr. Chen is currently a Professor of Materials Science and Engineering at University of Science and Technology Beijing. He receivedhisB.Sc in Materials Science and EngineeringatJilin University, M.Sc.in Materials Science and Engineering atNortheastern University, and Ph.D. in Materials Science and Engineering at University of Science and Technology Beijing. As a visiting scientist he has worked atMax-Planck-Institut Für Eisenforschung (Germany) and The Hong Kong Polytechnic University (China).
Research Interests
•Microstructure, Texture and Anisotropy, Residual Stress
•Deformation and Recrystallization, Phase Transformation
•Metals and Alloys, Thin Films, Information Storage Materials
Active Research Projects
•Title: “Texture of deep sub-micrometer scale copper interconnects in USLI” supported by National Natural Science Foundation of China
•Title: “Microstructure and texture of giant magnetoresistance multilayers” supported by National Natural Science Foundation of China
•Title: “Research and development of online texture measurement technique of metal sheets”supported by High-Technology Research and Development Program of China
Published Research (English only)
•J.Z.Hu, L.Chen. Effect of annealing on microstructure of Co/Cu multilayers. Journal of Materials Science: Materials in Electronics, 2015,26(5): 3168-3173
•G.L.Xie, X.T.Wang, L.Chen. Microstructural modelling of dynamic recrystallization in Nb microalloyed steels. Materials Science and Technology, 2012,28(7):778-782
•L.Chen, G.J.Yuan, J.G.Xu, F.Guo, N.Pang. Effect of trench aspect ratio on microstructure and texture in damascene Cu interconnects. Materials Science Forum, 2012,706-709:2605-2610
•N.Pang, L.Chen. Effect of substrate orientation on critical thickness of Cu thin films. Electronic Materials Letters, 2011,7(4): 359-363
•G.J.Yuan, L.Chen. Finite element simulation of hydrostatic stress in copper interconnects. Journal of Semiconductors, 2011,32(5)055011-1-055011-6